ROHM Launches New Top-side Cooling Package for SiC MOSFETs, Combining High Heat Dissipation with High Voltage Support

ROHM Launches New Top-side Cooling Package for SiC MOSFETs, Combining High Heat Dissipation with High Voltage Support

KYOTO, Japan, June 10, 2026 /PRNewswire/ -- ROHM Co., Ltd. has developed the TSC3PAK (14.00 x 18.58 x 3.50 mm) package for SiC MOSFETs. By adopting a top-side heat dissipation structure that places the heat dissipation surface on the top of the...

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